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OMAP5 FGA25N12 L1050 ACP112E LC21003B T7201255 1608B 74HCT86
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HCPMEM-512 - EDO DRAM Board 512Mbyte ( 32M x 144-Bit ) organized as 4Banks of 8Mx144, 4K Ref., 3.3V, ECC EDO公司的DRAM局512Mbyte2M的144位)筹办8Mx144K的参Banks。,3.3伏,环境保护运动委员

HCPMEM-512_638526.PDF Datasheet


 Full text search : EDO DRAM Board 512Mbyte ( 32M x 144-Bit ) organized as 4Banks of 8Mx144, 4K Ref., 3.3V, ECC EDO公司的DRAM局512Mbyte2M的144位)筹办8Mx144K的参Banks。,3.3伏,环境保护运动委员


 Related Part Number
PART Description Maker
HCPMEM-512 EDO DRAM Board 512Mbyte ( 32M x 144-Bit ) organized as 4Banks of 8Mx144, 4K Ref., 3.3V, ECC EDO公司的DRAM局512Mbyte2M的144位)筹办8Mx144K的参Banks。,3.3伏,环境保护运动委员
Hanbit Electronics Co.,Ltd.
GMM77332380CNTG-5 GMM77332380CNTG-6 32M X 72 EDO DRAM MODULE, 50 ns, DMA168 DIMM-168
32M X 72 EDO DRAM MODULE, 60 ns, DMA168 DIMM-168
Hynix Semiconductor, Inc.
AS4LC4M4E0 AS4LC4M4E1 AS4LC4M4E0-50JC AS4LC4M4E0-6 x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
4M x 4 CMOS DRAM (EDO) Family
Integrated Silicon Solution, Inc.
Alliance Semiconductor
KMM372V3200BS1 32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
Samsung Semiconductor Co., Ltd.
HM5117805LJ-5 HM5117805S-6 HM5117805TT-5 HM5117805 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh 2M X 8 EDO DRAM, 50 ns, PDSO28
Elpida Memory, Inc.
ELPIDA MEMORY INC
HM5165405F HM5164405F 64 M EDO DRAM (16-Mword ×4-bit)(64M EDO DRAM (16-M×4-)
Hitachi,Ltd.
HYB3164165BT-40 HYB3165165BT-40 HYB3166165BT-40 HY 4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 60 ns, PDSO50
INDUCTOR CHIP .10UH 5% 0805 SMD 4M X 16 EDO DRAM, 60 ns, PDSO50
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 40 ns, PDSO50
http://
SIEMENS A G
SIEMENS AG
HYM72V1625GS-60 HYM72V1625GS-50 HM72V166 HYM72V162 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 50 ns, DMA168
16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
16M x 72-Bit EDO-DRAM Module (ECC - Module)
From old datasheet system
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
KMM372F3200BS1 KMM372F3280BS1 32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新,3.3
Samsung Semiconductor Co., Ltd.
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Samsung Semiconductor Co., Ltd.
HYI25D512800CT-6 HYI25D512800CE-6 HYB25D512800CE-6 64M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
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512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PDSO66
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Qimonda AG
HYM72V2005GU-60 HYM72V2005GU-50 HYM64V2005GU-60 HY    3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module
2M x 72 Bit ECC DRAM Module unbuffered
2M x 64 Bit DRAM Module unbuffered
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Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
 
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